n n p p n n 2N3108 ? 2n3110 comset semiconductors 1/3 g g e e n n e e r r a a l l p p u u r r p p o o s s e e a a m m p p l l i i f f i i e e r r s s a a n n d d s s w w i i t t c c h h e e s s the 2N3108 and 2n3110 are npn transistors mounted in to-39 metal package. they are intended for large signal, low noise industrial applications. compliance to rohs. absolute maximum ratings symbol ratings value unit 2N3108 2n3110 v ceo collector-emitter voltage i b =0 60 40 v v cbo collector-base voltage i e =0 100 80 v v ebo emitter-base voltage i c =0 5 v i c collector current 1 a p d total power dissipation t amb = 25 0.8 w t case = 25 5 t j junction temperature -65 to +150 c t st g storage temperature range -65 to +150 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient 219 c/w r thj-c thermal resistance, junction to case 35 c/w b c e
n n p p n n 2N3108 ? 2n3110 08/08/2012 comset semiconductors 2/3 electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = 60 v, i e = 0 t amb = 150c - - 10 a i ces collector cutoff current v ce = 60 v, v be = 0 - - 10 na i ebo emitter cutoff current v be = 5.0 v, i c = 0 - - 10 na v cbo collector-base breakdown voltage i c = 100 a, i e = 0 2N3108 100 - - v 2n3110 80 - - v ceo collector-emitter breakdown voltage i c = 30 ma, i b = 0 2N3108 60 - - v 2n3110 40 - - v ebo emitter-base breakdown voltage i e = 100 a, i c = 0 7 - - v v ce(sat) collector-emitter saturation voltage i c = 150 ma, i b = 15 ma - - 0.25 v i c = 1 a, i b = 100 ma - - 1 v be(sat) base-emitter saturation voltage i c = 150 ma, i b = 15 ma - - 1.1 v i c = 1 a, i b = 100 ma - - 2 h fe dc current gain i c = 150 ma, v ce = 1 v 40 - 120 - i c = 0.1 ma, v ce = 10 v 20 - i c = 500 ma, v ce = 10 v 25 - - i c = 150 ma, v ce = 10 v t amb = -55c 15 - - f t transition frequency i c = 50 ma, v ce = 10 v f = 20mhz 60 - - mhz c ebo emitter-base capacitance i c = 0, v eb = 0.5 v f = 1mhz - - 80 pf c cbo collector-base capacitance i e = i e =0, v cb = 10 v f = 1mhz 2N3108 - - 20 pf 2n3110 - - 25 switching times symbol ratings value unit t on turn-on time i c = 150 ma; i b1 = 7.5 ma, v cc = 20 v 200 ns t off turn-off time i c = 150 ma i b1 = -i b2 = 7.5 ma v cc = 20 v 600
n n p p n n 2N3108 ? 2n3110 08/08/2012 comset semiconductors 3/3 mechanical data case to-39 revised august 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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